Electronic device semiconductor device and manufacturing method thereof

ABSTRACT

The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor devices having a circuitconstituted by a thin film transistor (hereinafter, also referred to asa TFT), and a manufacturing method of the semiconductor devices. Forexample, the present invention relates to electronic devices mounting, apart thereof, an electro-optical device typified by a liquid crystaldisplay panel or a light-emitting display device having an organiclight-emitting element.

Note that a semiconductor device in this specification indicates ageneral device which can function with use of semiconductorcharacteristics, and the category of the semiconductor devices in thisspecification includes all types of devices such as electro-opticaldevices, semiconductor circuits and electronic devices.

2. Description of the Related Art

In recent years, a technique for forming a thin film transistor (TFT)using a thin semiconductor film (the thickness: about several to severalhundred nm) formed over a substrate having an insulating surface hasbeen attracted attentions. Thin film transistors have been widely usedin electron devices such as ICs or electro-optical devices, and inparticular, such thin film transistors have been developed actively asswitching elements of image display devices.

The application range of active matrix type display devices which aretypical image display devices, has become broad, and high definition,high aperture ratio or high reliability has been required more, with theincrease in screen size.

In order to realize a high-performance semiconductor device which canoperate at high speed, a structure with a low-electric-resistant wiringmaterial will be more needed.

Reference 1 (Japanese Patent Application Laid-Open No. 2000-188251)describes a technique in which a film is formed over a semiconductorwafer using a device which can discharge a resist solution from a nozzleto have a thin linear shape.

SUMMARY OF THE INVENTION

In the present circumstances, a film formation method using spin coatingis used in many manufacturing processes. When the substrate size isfurther increased in the future, the film formation method using spincoating has disadvantages in mass production, since a mechanism forrotating a large substrate becomes large or the loss of a materialsolution or waste of liquid becomes increased. In a case that arectangular substrate is spun to be coated with a material solution; thecoated film tends to be uneven, that is, the coated film tends to have acircular spot with its rotation axis as a center. The present inventionprovides a manufacturing process using a droplet-discharging method thatis suitable for manufacturing a large substrate in mass production.

The present invention provides a large screen display using a sourcewiring (also referred to as a source electrode) or a drain wiring (alsoreferred to as a drain electrode) which is formed by adroplet-discharging method, and a manufacturing method of the largescreen display.

According to the present invention, a photosensitive material solutionof a conductive film is selectively discharged by a droplet-dischargingmethod, selectively exposed to laser light, and developed or etched,thereby allowing only the region exposed to laser light to be left andrealizing a more microscopic pattern of a wiring than the pattern itselfformed by discharging. Alternatively, a photosensitive material of aconductive film is selectively formed by a printing method such as anano in print technique, selectively exposed to laser light, anddeveloped or etched, thereby only allowing the region exposed to laserlight to be left and realizing a more microscopic pattern of a wiringthan the pattern itself formed by discharging.

According to the present invention, processes such as a light-exposurestep or a development step can be shortened in a process for forming aconductive pattern (such as a source wiring or a drain wiring), the useamount of materials can also be reduced, and thus, costs can be largelyreduced. Thus, the present invention can deal with large sizesubstrates.

The material solution of a conductive film includes a metal such as Ag,Au, Cu, Ni, Al, Pt, W or Mo, or an alloy thereof, and a photosensitiveresin including an organic polymer resin, a photo polymerizationinitiator, a photo polymerization monomer, a solvent, etc. As organicpolymer resins, novolac resin, acrylic copolymer, methacrylic copolymer,cellulose derivatives, cyclic rubber resin, or the like can be used.

An additive agent such as a sensitizing agent, a sensitizationauxiliary, a polymerization inhibitor, a plasticizer, a thickener, anoxidant inhibitor, a dispersion inhibitor, or a precipitation inhibitormay be added into the material solution of a conductive film asnecessary.

A photosensitive material can be broadly divided into negative type andpositive type. In a case of using the negative type photosensitivematerial, since an exposed portion brings about chemical reactions, andonly the portion which is chemically reacted by a developer is left tobecome a pattern. In a case of using the positive type photosensitivematerial, an exposed portion brings about chemical reactions, and theportion which is chemically reacted by a developer is dissolved to leaveonly the unexposed portion, and then, a pattern is formed. In thepresent invention, a negative photosensitive material is included in amaterial solution of a conductive film. As negative photosensitivematerials, a material including at least one type of a monomer, anoligomer, a polymer including one or more functional group such as anunsaturated group in molecules; a photosensitive compound such as anaromatic diazo compound, an aromatic azide compound, or an organichalide compound; a diazo resin; and the like are given.

Further, since the wiring width is determined based on the accuracy oflaser irradiation, a desired wiring width can be obtained irrespectiveof an amount or viscosity of droplets to be dropped or a nozzlediameter. Generally, the wiring width is varied by a contact anglebetween a material solution discharged from a nozzle and a substrate.For example, the amount of droplets discharged from one nozzle having adiameter of 50 μm×50 μm of a typical ink jet device is 30 to 200 pl, andan obtained wiring width is 60 to 300 μm. A wring having a narrow width(for example, an electrode width of 0.5 to 10 μm) can be obtained byconducting laser exposure according to the present invention. The amountof a material solution discharged from a nozzle having a thinnerdiameter than that of a typical nozzle is 0.1 to 40 μl, and an obtainedwiring width is 5 to 100 μm.

In a case of forming a wiring pattern by a droplet-discharging method, amaterial solution of a conductive film may be discharged intermittentlyfrom a nozzle one droplet by one droplet in the form of a dot, or amaterial solution of a conductive film may be discharged continuouslysuch that droplets attached in a linear form. In the present invention,a wiring pattern may be appropriately formed by discharging the materialsolution of a conductive film either in the form of a dot or in thelinear form. In a case of forming a wiring pattern having a relativelywide width, it leads to better productivity that the wiring pattern isformed by continuously discharging a material solution from a nozzlesuch that the material solution is attached in a linear form.

Before forming a wiring pattern by a droplet-discharging method, a baselayer for improving adhesion is preferably formed in advance over awhole surface or a selected area of a substrate. Alternatively, apretreatment for base may be performed. As formation of the base layer,a treatment such that a photocatalyst material (titanium oxide(TiO_(x)), strontium titanate (SrTiO₃), cadmium selenide (CdSe),potassium tantalate (KTaO₃), cadmium sulfide (CdS), zirconium oxide(ZrO₂), niobium oxide (Nb₂O₅), zinc oxide (ZnO), iron oxide (Fe₂O₃),tungsten oxide (WO₃)) is dropped over the whole surface by a sprayingmethod or a sputtering method, may be performed. Alternatively, atreatment such that an organic material (polyimide, acrylic, or a coatedinsulating film using a material which has a skeleton formed by the bondof silicon (Si) and oxygen (O), and which includes at least one ofhydrogen, fluoride, an alkyl group, and aromatic hydrocarbon as asubstituent) is selectively formed by an ink jet method or a sol-gelmethod, may be performed.

A photocatalyst substance refers to a substance having a photocatalystfunction that yields photocatalyst activity by being irradiated withlight in an ultraviolet region (wavelength of 400 nm or less,preferably, 380 nm or less). If a conductor mixed into a solvent isdischarged by a droplet-discharging method as typified by an ink jetmethod onto a photocatalyst substance, a microscopic drawing can berealized.

Before emitting light to TiO_(x), TiO_(x) has a lipophilic property butno hydrophilic property, that is, the TiO_(x) has water-sheddingproperty. However, by light irradiation, TiO_(x) brings aboutphotocatalyst activity and has hydrophilic property but loses alipophilic property. Further, TiO_(x) is capable of having both Of alipophilic property and a hydrophilic property depending on the lightirradiation time.

By doping a photocatalyst substance with a transition metal (Pd, Pt, Cr,Ni, V, Mn, Fe, Ce, Mo or W), a photocatalyst activity can be improved ora photocatalyst activity can be yielded with light in a visible lightregion (wavelength of 400 to 800 nm). Since light wavelength can bedetermined depending on a photocatalyst substance, light irradiationmeans to emit light having a wavelength that can yield a photocatalystactivity of a photocatalyst substance.

A hydrophilic property means a property of being easier to be wet bywater. A super hydrophilic property refers to a state of having acontact angle of 30° C. or less, especially, 5° C. or less. On the otherhand, a water-shedding property refers to a property of being difficultto be wet by water with a contact angle of 90° C. or more. Similarly, alipophilic property refers to a property of being easier to be wet byoil, whereas an oil-shedding property refers to a property of beingdifficult to be wet by oil. Further, a contact angle means an angleformed by a surface and a tangent to a droplet at the edge of thedropped droplet.

In a case that a material solution of a conductive film has a flowproperty or the flow property is increased in baking, when forming awiring using a material solution of a conductive film by adroplet-discharging method, there is a risk that it becomes difficult toform a microscopic pattern due to the drippings of droplets. In a casethat a space between wirings is narrow, there is a risk that patternsare in contact with each other. According to the present invention, amicroscopic pattern can be obtained by mixing a photosensitive materialinto the material solution of a conductive film, precisely exposing itlaser light and developing it, even if a pattern becomes wide due to thedrippings of droplets.

A structure of the present invention disclosed in this specification isa semiconductor device comprising: a gate electrode formed over asubstrate having an insulating surface; a gate insulating film coveringthe gate electrode; a first island-like semiconductor layer including achannel formed over the gate insulating film; a second island-likesemiconductor layer including an impurity element imparting an n-type ora p-type conductivity formed over the first island-like semiconductorlayer; a drain wiring and a source wiring formed over the secondisland-like semiconductor layer, wherein the source wiring crosses andoverlaps the first island-like semiconductor layer and wherein the firstisland-like semiconductor layer overlapped with a region between thesource wiring and the drain wiring is a channel.

Another structure of the present invention is, as shown in FIG. 2B, asemiconductor device comprising: a gate electrode formed over asubstrate having an insulating surface; a gate insulating film coveringthe gate electrode; a first island-like semiconductor layer including achannel formed over the gate insulating film; a second island-likesemiconductor layer including an impurity element imparting an n-type ora p-type conductivity formed over the first island-like semiconductorlayer; a drain wiring and a source wiring formed over the secondisland-like semiconductor layer, wherein the length L between one endand the other end of the first island-like semiconductor film is a sumof a channel length L1, a length of a region overlapping the drainwiring, a length L2 between the region overlapping the drain wiring andone end of the semiconductor film, a length of a region overlapping thesource wiring, and a length L3 between the region overlapping the sourcewiring and the other end of the semiconductor film.

In each of the above structures, the length of the region in which thesource wiring overlaps the first semiconductor layer with the secondsemiconductor layer therebetween is equal to a width of the sourcewiring. Further, the length of the region where the source wiringoverlaps the first semiconductor layer is equal to a width of the sourcewiring, since the width of the source wiring is determined by laserscanning and laser light is scanned in such a way that it crosses thefirst semiconductor layer.

In each of the above structures, the length of the region where thedrain wiring overlaps the first semiconductor layer is equal to a widthof the drain wiring.

In a pattern forming method of a conductive layer or the like with theuse of a droplet-discharging method, a pattern is formed as follows. Apattern forming material which is processed into particulates, isdischarged, and welded or fused to be joined by baking to cure thepattern forming material. Accordingly, although a pattern which isformed by a sputtering method or the like often shows a columnarstructure, the pattern formed by the above method often shows apolycrystalline state having a lot of grain boundaries.

One feature of the present invention is that a conductive layer (asource wiring or a drain wiring) formed by a droplet-discharging methodis a material containing resin. This resin is a material serving as abinder or the like included in droplets including a conductive material,and this resin, a solvent and metal nano particles are mixed, so thatdischarging droplets by an ink-jet method becomes possible.

In the above structure, an insulating film covering the firstsemiconductor layer, and the drain and source wirings is provided. Thefirst semiconductor layer can be protected by this insulating film.

In each of the above structures, the drain wiring has a meanderingportion, and the contact with the upper electrode is made in themeandering portion. Since the drain wiring is formed by scanning laserlight, one-stroke pattern is preferable, and the conductive pattern in aportion in which a contact hole is formed, is selectively mademeandering. In addition, just after forming the contact hole, theserpentine conductive film pattern and the surface of the insulatingfilm which is not overlapped with the conductive film are exposed. Bymaking the conductive pattern meandering (zigzag) in the contactportion, concavities and convexities are formed, and the adhesion withthe upper electrode to be formed thereon can be enhanced.

A structure of the present invention for realizing the above-describedstructures is a manufacturing method of a semiconductor device,comprising the steps of: forming a gate electrode over a substratehaving an insulating surface; forming a gate insulating film coveringthe gate electrode; forming a first semiconductor layer over the gateinsulating film, and forming a second semiconductor layer including animpurity element imparting an n-type or a p-type conductivity formedover the first semiconductor layer; forming a first pattern over thesecond island-like semiconductor layer by a droplet-discharging methodor a printing method; irradiating a region having a width smaller thanthe first pattern with laser light, removing a region of the firstpattern which is not irradiated with the laser light to form a drainwiring and a source wiring; etching a part of a surface of thesemiconductor layer using the drain wiring and the source wiring asmasks so as to separate a channel formed from the first semiconductorlayer, and to separate the second semiconductor layer into two portionsto sandwich the channel.

In the structure regarding the manufacturing method, the laserirradiation is conducted such that the laser light crosses the firstsemiconductor layer.

The present invention can be applied to channel-etch type TFTs, andchannel-stop type TFTs (inversely staggered TFTs). In addition, thepresent invention may be applied to multigate TFTs having plural channelforming regions, e.g., double gate TFTs, without being limited to singlegate type TFTs.

In this specification, a semiconductor film mainly containing silicon, asemiconductor film mainly containing an organic material, or asemiconductor film mainly containing a metal oxide can be used, as asemiconductor layer serving as an active layer of a TFT. As thesemiconductor film mainly containing silicon, an amorphous semiconductorfilm, a semiconductor film having a crystalline structure, a compoundsemiconductor film having an amorphous structure and the like can beused, specifically, amorphous silicon, micro-crystalline silicon,polycrystalline silicon or the like can be used. As the semiconductorfilm mainly containing an organic resin, a semiconductor film mainlycontaining a substance which includes a constant amount of carbon orallotropes of carbon (excluding diamond), and another element, can beused. Specifically, pentacene, tetracene, a thiophen oligomerderivative, a phenylene derivative, a phthalocyanine compound, apolyacetylene derivative, a polythiophene derivative, a cyanine dye,etc., are given. Further, as the semiconductor film mainly containing ametal oxide, zinc oxide (ZnO); an oxide of zinc, gallium and indium(In—Ga—Zn—O); or the like, can be used.

By the present invention, miniaturization of bottom gate type TFTs canbe achieved by using a wiring formed by a droplet-discharging method.Specifically, the interval between a source wiring and a drain wiringwhich are formed using laser light, can be adjusted based on theconditions of laser light (such as a scanning method or a spot size).Thus, the channel length can be made microscopic.

The source wiring and the drain wiring electrically connect with thesemiconductor layer by crossing them over the semiconductor layer, andthe pattern size of the semiconductor layer can be reduced.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B each show a top view showing one aspect of the presentinvention (Embodiment Mode 1);

FIGS. 2A and 2B are a top view and a cross-sectional view showing oneaspect of the present invention (Embodiment Mode 1), respectively;

FIG. 3 shows a laser beam drawing apparatus (Embodiment Mode 1);

FIGS. 4A and 4B each show a top view showing one aspect of the presentinvention (Embodiment Mode 2);

FIGS. 5A and 5B are a top view and a cross-sectional view showing oneaspect of the present invention Embodiment Mode 2), respectively;

FIG. 6 is one example of a cross-section of a liquid crystal displaydevice (Example 1);

FIG. 71 is one example of a cross-section of a light-emitting device(Example 2);

FIG. 8 is one example of a cross-section showing a structure of thepresent invention (Example 3);

FIGS. 9A to 9F each are an external view describing an example of asemiconductor device (Example 3);

FIGS. 10A to 10D each show an example of electronic devices (Example 4);and

FIG. 11 shows an example of an electronic device (Example 4).

DETAILED DESCRIPTION OF THE INVENTION

The embodiment modes of the present invention are described hereinafter.

Embodiment Mode 1

Here, a manufacturing example of an active matrix type display deviceusing a channel-etch type TFT as a switching element, is shown in FIGS.1A, 1B, 2A and 2B.

A base insulating film 110 is formed over a substrate 110 having aninsulating surface. A base film made of an insulating film such assilicon oxide, silicon nitride, silicon oxynitride, or silicon nitrideoxide is formed as the base insulating film 110. If it is not necessary,there is no particular need to form the base insulating film.

In addition to a non-alkaline glass substrate such as bariumborosilicate glass, alumino borosilicate glass, or aluminosilicate glassmanufactured by a fusion method or a floating method, a plasticsubstrate having a heat resistance that can withstand a processingtemperature in this manufacturing process, or the like can be used forthe substrate 100.

Thereafter, a conductive film having a thickness of 100 to 600 nm isformed by a sputtering method over the base insulating film 110. Theconductive film may be formed with a single layer of an element selectedfrom Ta, W, Ti, Mo, Al or Cu, or an alloy material or a compoundmaterial mainly containing such an element, or a stacked layer thereof.In addition, a semiconductor film typified by a polycrystalline siliconfilm doped with an impurity element such as phosphorus may be used.

Subsequently, a resist mask is formed with a photomask, and etching isconducted by a dry etching method or a wet etching method. In theetching step, the conductive film is etched to form a gate electrode101.

Thereafter, a gate insulating film 111, a semiconductor film, and ann-type semiconductor film are sequentially formed by a plasma CVD methodor a sputtering method.

As the gate insulating film 111, a material mainly containing siliconoxide, silicon nitride, silicon nitride oxide or silicon oxynitridewhich is formed by a PCVD method, is used. In addition, a siloxane basedpolymer is discharged by a droplet-discharging method and baked to forma SiO_(x) film containing an alkyl group as the gate insulating film111.

The semiconductor film is formed with an amorphous semiconductor film ora semi-amorphous semiconductor film which is manufactured with a vaporphase growth method, a sputtering method or a thermal CVD method using asemiconductor material gas typified by silane or germanium.

An n-type semiconductor film may be formed by a PCVD method using asilane gas and a phosphine gas, which can be formed with an amorphoussemiconductor film or a semi-amorphous semiconductor film. A contactresistance of the semiconductor film and an electrode (an electrode tobe formed in a later step) is decreased when an n-type semiconductorfilm is provided, which is preferable. However, the n-type semiconductorfilm may be formed if necessary. In addition, a p-type semiconductorfilm may be used instead of the n-type semiconductor film. Asemiconductor film including an impurity element imparting p-typeconductivity to a semiconductor, such as boron, may be used as thep-type semiconductor film.

Thereafter, a mask is provided, and a semiconductor film and an n-typesemiconductor film are etched selectively to obtain an island-likesemiconductor film and an n-type semiconductor film 106. Themanufacturing method of the mask may be a droplet-discharging method ora printing method (relief printing, flat plate, copperplate printing,screening printing or the like). Although a desired mask pattern may beformed directly by a droplet-discharging method or a printing method, itis desirable that a rough mask pattern is formed by adroplet-discharging method or a printing method, and then, a fine resistpattern may be formed by conducting a selective light exposure, in orderto form a mask pattern in high definition.

Thereafter, a composition which includes a photosensitive material and aconductive material such as silver (Ag), gold (Au), copper (Cu),tungsten (W), or aluminum (Al) is selectively discharged by adroplet-discharging method to form a conductive film pattern 103. Theconductive film pattern 103 is formed to cover the semiconductor filmand the n-type semiconductor film.

A top view at this time is shown in FIG. 1A. A region surrounded by adotted line shows an outline 102 of a pattern shape of the semiconductorfilm, and has a rectangular shape with the length L and the width W. Itshould be noted that the present invention is not limited to therectangular shape, and an oval shape, an L-like shape, or an irregularshape may be employed, although this embodiment mode describes the caseof the rectangular shape.

Thereafter, a selective laser irradiation is conducted to expose a partof the conductive film pattern. Here, laser scanning is conducted sothat laser light crosses the semiconductor film having the rectangularshape. Two crossing portions are formed on the semiconductor film by thelaser scanning. Since a photosensitive material is pre-included in thematerial solution of a conductive film to be discharged, a chemicalreaction occurs due to laser irradiation. Here, an example of using anegative type photosensitive material as the photosensitive material isshown, which allows the portion which is chemically reacted by laserlight to be left. An accurate pattern shape, in particular, a wiringwith a thin width can be obtained by laser irradiation.

Herein, a laser beam drawing apparatus is described with reference toFIG. 3. A laser beam drawing apparatus 401 includes: a personal computer(hereinafter referred to as a PC) 402 for conducting various types ofcontrol in laser irradiation; a laser oscillator 403 for outputting alaser beam; a power source 404 of the laser oscillator 403; an opticalsystem (ND filter) 405 for attenuating the laser beam; an acousto-opticmodulator (AOM) 406 for modulating intensity of the laser beam; anoptical system 407 having a lens for enlarging or reducing a crosssection of the laser beam, a mirror for changing a light path, and thelike; a substrate movement mechanism 409 having an X stage and a Ystage; a D/A converter 410 for converting control data outputted fromthe PC into digital-analog; a driver 411 for controlling theacousto-optic modulator (AOM) 406 in accordance with an analog voltageoutputted from the D/A converter; and a driver 412 for outputting adriving signal for driving the substrate movement mechanism 409.

A laser oscillator that can oscillate ultraviolet light, visible light,or infrared light can be used as the laser oscillator 403. An excimerlaser oscillator of KrF, ArF, XeCl, Xe, or the like, a gas laseroscillator of He, He—Cd, Ar, He—Ne, HF, or the like, a solid-state laseroscillator using a crystal such as YAG, GdVO₄, YVO₄, YLF, or YAlO₃ dopedwith Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm, a semiconductor laser oscillatorof GaN, GaAs, GaAlAs, InGaAsP, or the like can be used as the laseroscillator. Note that it is preferable to apply any of first to fifthharmonics of a fundamental wave to the solid-state laser oscillator.

A plurality of laser oscillators may be used to shorten irradiationtime, and laser irradiation may be conducted to plural portions of onesubstrate to be baked.

Subsequently, a method for exposing a photosensitive material to lightwith the use of the laser beam drawing apparatus is described. Thephotosensitive material here indicates a material of a conductive film(including a photosensitive material) which becomes a conductive filmpattern.

When a substrate 408 is set on the substrate movement mechanism 409, thePC 402 detects a position of a marker marked on the substrate with acamera which is not shown in the diagram. Next, the PC 402 generatesmovement data for moving the substrate movement mechanism 409, based onposition data of the detected marker and preliminarily inputted drawingpattern data. Thereafter, the PC 402 controls the amount of output lightfrom the acousto-optic modulator (AOM) 406 through the driver 411.Accordingly, after a laser beam outputted from the laser oscillator 403is attenuated by the optical system 405, the amount of light iscontrolled by the acousto-optic modulator (AOM) 406 to be apredetermined amount. On the other hand, a light path and a beam shapeof the laser beam outputted from the acousto-optic modulator (AOM) 406are changed by the optical system 407 and the laser beam is collected bya lens. Thereafter, a photosensitive material formed over the substrateis irradiated with the beam to be exposed to light. At this time, themovement of the substrate movement mechanism 409 in an X direction and aY direction is controlled in accordance with the movement data generatedby the PC 402. Consequently, a predetermined portion is irradiated withthe laser beam, and light exposure of the photosensitive material isperformed.

A part of the energy of the laser light emitted to the photosensitivematerial is converted into heat so that a part of the photosensitivematerial is reacted. Therefore, a width of a pattern becomes slightlylarger than that of the laser beam. Further, since laser light having ashort wavelength can be easily collected to have a smaller beamdiameter, a laser beam having a short wavelength is preferably emittedto form a pattern having a microscopic width.

The form of a laser beam spot on a surface of the photosensitivematerial is processed into a point-like shape, a round shape, an ovalshape, a rectangular shape, or a linear form (in a strict sense, anelongated oblong shape) by an optical system. The form of a laser beamspot may be round. However, the form of the laser beam spot ispreferably linear, since a pattern having a uniform width can be formedwith the linear laser spot.

Here, a laser beam is selectively emitted while moving the substrate.However, the present invention is not limited thereto. A laser beam canbe emitted by scanning the laser beam into X or Y axis direction. Inthis instance, a polygon mirror or a galvanometer mirror is preferablyused as the optical system 407.

Then, development is performed by using etchant (or developer) to removeexcess portions, and main-baked to form a metal wiring serving as asource wiring 104 or a drain wiring 105.

Alternatively, exposure by laser irradiation may be performed, after amaterial solution of a conductive film is dropped, and dried indoors orpre-baked.

When the energy per area of laser light for the light-exposure is madelarger, it is possible that main baking becomes unnecessary. Themanufacturing process can be shortened by reducing the step of mainbaking. As a developer, an organic solvent, an alkali water solution orthe like can be used. For example, when an alkali water solution is usedfor the development, a polymer which is soluble in alkali (such asmethyl acrylate, ethyl acrylate, or isopropyl acrylate) is preferablycontained as a composition for forming the conductive film pattern 103.

A top view at this time is shown in FIG. 1B. As shown in FIG. 1B, ann-type semiconductor film 106 which is not overlapped with the sourcewiring 104 or the drain wiring 105, is exposed. In addition, at thisstage, the semiconductor film and the n-type semiconductor film have thesame pattern.

The length L between one end and the other end of the semiconductor filmis a sum of L1, the length of a region overlapping the drain wiring, thelength L2 between the region overlapping the drain wiring and one end ofthe semiconductor film, the length of a region overlapping the sourcewiring, and the length L3 between the region overlapping the sourcewiring and the other end of the semiconductor film. It should be notedthat the interval L1 between the source wiring 104 and the drain wiring105 is equal to the length of a channel forming region to be formed.

Then, a part of the n-type semiconductor film and an upper portion ofthe semiconductor film are etched using the source wiring 104 and thedrain wiring 105 as masks. A hydrogen treatment is conducted ifnecessary. At this time, a channel-etch type TFT having a channelforming region 107 which becomes an active layer, a source region 108for making an ohmic contact with the source wiring 104, and a drainregion 109 for making an ohmic contact with the drain wiring 105, iscompleted. An insulating film protecting the channel forming region 107may be formed. By using an insulating film such as silicon nitride orsilicon oxynitride as the insulating film for protection, the channelforming region 107 can be protected from contamination due toimpurities, and thus, the reliability of a TFT can be increased.

Thereafter, an electrode 112 is formed to be overlapped with the drainwiring 105. The electrode 112 is obtained by forming a predeterminedpattern made from a composite containing indium tin oxide (ITO), indiumtin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide(SnO₂), or the like by a droplet-discharging method or a printingmethod, and baking it.

In a case where ITO is formed by a droplet-discharging method or aprinting method, a precursor of a transparent conductive film may beused, for example, a liquid material is used, in which organic indiumand organic tin of 8% are mixed in xylol in such a way that the rate ofthe organic indium and the organic tin is 97:3.

In a case of forming a liquid crystal display device, the electrode 112is referred to as a pixel electrode. Further, in a case of forming areflective liquid crystal display device, a metal film pattern havingreflectivity such as silver (Ag) or aluminum (Al) is formed for theelectrode 112.

In a case of forming a light-emitting display device, the electrode 112is used as the first electrode; a partition (also referred to as a bank)covering an edge of the electrode 112 is formed; a layer functioning asan electroluminescent layer, i.e., a layer including an organic compoundis formed, and a second electrode is formed last. Note that it isnecessary that materials of the first electrode and the second electrodeare selected in consideration of the work function, and the firstelectrode and the second electrode each can serve as an anode or acathode according to the pixel structure.

A top view when the electrode 112 is formed is shown in FIG. 2A. Inaddition, FIG. 2B shows a cross sectional view taken along the line A-Bof FIG. 2A.

As described above, in this embodiment mode, the conductive film patternformed by a droplet-discharging method is exposed to laser light, anddeveloped, thereby realizing a microscopic pattern. By forming variouspatterns directly over the substrate by a droplet-discharging method, adisplay panel can be readily manufactured even if a fifth generation andlater of a glass substrate having a side of over 1000 mm is used.

When the obtained TFT or the like is transferred to a flexible plasticfilm, a peeling layer (also referred to as a separation layer) is formedfirst over the substrate 100, a layer to be peeled for TFT or the likeis formed. Then, the peeling layer is removed or broken, an element suchas a TFT is separated from the substrate 100, and then, an adhesivelayer is provided and the element is attached onto a plastic film. Itshould be noted that the step of peeling the layer to be peeled from thesubstrate is not especially limited, and a known method may be used.Above all, with the use of a peeling technique and a transferringtechnique described in Japanese Patent Application Laid-Open No.2003-174153, a TFT having a high field effect mobility which can beobtained by a heat treatment of 500° C. or more over a glass substratecan be transferred to a plastic substrate with a good yield. The peelingtechnique and the transferring technique described in Japanese PatentApplication Laid-Open No. 2003-174153 are a peeling method in which ametal layer is formed over a substrate, an oxide layer is stacked overthe metal layer, at this time, a metal oxide layer is produced at theinterface between the metal layer and the oxide layer, and peeling isperformed in a later step with the use of the metal oxide layer.

Specifically, a tungsten film is formed by a sputtering method over aglass substrate, and a silicon oxide film is stacked by a sputteringmethod. A tungsten oxide layer in an amorphous state is formed when thesilicon oxide film is formed by a sputtering method. Then, an elementsuch as a TFT is formed over the silicon oxide film. The tungsten oxidelayer is crystallized by performing a heat treatment of 400° C. or morein the element formation process. When physical force is added thereto,peeling occurs inside or at the interface of the tungsten oxide layer.The layer which has been peeled in this way (including an element suchas a TFT) can be transferred to a plastic substrate.

In a case that the adhesion between layers is low when peeling isconducted, there is a risk that the portion with low adhesion is likelyto be peeled and broken. After discharging droplets of a compositionincluding a conductive material, selective laser irradiation isconducted. Thus, fusion of conductive particles is made in a short time,and the adhesion with the base film is increased. However, the metalwiring including a small amount of organic resin has a possibility ofpeeling defects in the peeling step. According to the present invention,miniaturization is done by removing a portion which is not irradiatedwith laser light, and forming an insulating film thereon to be incontact. Thus, the contact area between the insulating film and the basefilm is increased, thereby reducing the peeling defects which are likelyto occur in the peeling step.

Embodiment Mode 2

An example of manufacturing an active matrix display device having achannel-stop type TFTs a switching element with reference to FIGS. 4A,4B, 5A and 5B.

As in Embodiment Mode 1, a base insulating film 510 is formed over asubstrate 500 having an insulating surface. A base film made of aninsulating film such as silicon oxide, silicon nitride, silicon nitrideoxide or silicon oxynitride is formed as the base insulating film 510.If it is not necessary, there is no particular need to form the baseinsulating film.

Thereafter, a conductive film having a thickness of 100 to 600 nm isformed by a sputtering method over the base insulating film 510. Theconductive film may be formed with a single layer of an element selectedfrom Ta, W, Ti, Mo, Al or Cu, or an alloy material or a compoundmaterial mainly containing such an element, or a stacked layer thereof.In addition, a semiconductor film typified by a polycrystalline siliconfilm doped with an impurity element such as phosphorus, may be used.

Subsequently, a resist mask is formed with a photomask, and etching isconducted by a dry etching method or a wet etching method. In thisetching step, the conductive film is etched to form a gate electrode501.

Thereafter, a gate insulating film 511 and a semiconductor film aresequentially formed by a plasma CVD method or a sputtering method. Asthe gate insulating film 511, a material mainly containing siliconoxide, silicon nitride, silicon nitride oxide or silicon oxynitridewhich is formed by a PCVD method, is used.

The semiconductor film is formed with an amorphous semiconductor film (asemiconductor film containing Si or Ge) which is manufactured by a vaporphase growth method, a sputtering method or a thermal CVD method using asemiconductor material gas typified by silane or germanium, or asemiconductor film mainly containing an organic material. As thesemiconductor film mainly containing an organic material, asemiconductor film mainly containing a substance which includes aconstant amount of carbon or allotropes of carbon (excluding diamond)and another element, can be used (such as a material showing a chargecarrier mobility of at least 10⁻³ cm²/V·s at a room temperature (20°C.), for example, a π-conjugated system aromatic amine compound, a chaincompound, an organic pigment, an organic silicon compound or the like).Specifically, pentacene, tetracene, a thiophen oligomer derivative, aphenylene derivative, a phthalocyanine compound, a polyacetylenederivative, a polythiophene derivative, a cyanine dye, and the like, aregiven.

Then, an inorganic insulating film is formed by e.g., a plasma CVDmethod and formed into a desired shape in a desired region by aphotolithography technique, to form channel protective films 514 and515. In addition, it is also possible that a material solution includinga photosensitive material, e.g., polyimide including a photosensitivematerial, polyvinyl alcohol including a photosensitive material or thelike is dropped and selectively irradiated with laser light to remove aportion which is not irradiated, thereby forming a pattern, in formingthe channel protective films 514 and 515.

Thereafter, the semiconductor film is formed into a desired patternshape by a photolithography technique. Here, the pattern shape of thesemiconductor film is formed into an island-like shape, and the dottedline in FIG. 4A shows the outline of the semiconductor film and theinside surrounded by the dotted line corresponds to the semiconductorfilm.

After that, a semiconductor film having one conductivity type, e.g., ann-type semiconductor film, is formed by a plasma CVD method or the like.

Then, the n-type semiconductor film is formed into a desired pattern bya photolithography technique.

Thereafter, a composition which includes a photosensitive material and aconductive material such as silver (Ag), gold (Au), copper (Cu),tungsten (W), or aluminum (Al) is selectively discharged by adroplet-discharging method to form a conductive film pattern 503. Theconductive film pattern 503 is formed to cover the semiconductor film,the n-type semiconductor film and the channel protective films.

A top view at this time is shown in FIG. 4A. It should be noted that thepresent invention is not limited to the rectangular shape, and an ovalshape, an L-like shape, or an irregular shape may be employed, althoughthis embodiment mode describes the case where the semiconductor film hasthe rectangular shape.

Thereafter, laser irradiation is selectively conducted to expose a partof the conductive film pattern to laser light. Here, laser scanning isconducted so that laser light crosses the semiconductor film having therectangular shape. Five crossing portions are formed on thesemiconductor film by the laser scanning. Since a photosensitivematerial is pre-included in the material solution of a conductive filmto be discharged, a chemical reaction occurs due to laser irradiation.Here, an example of using a negative type photosensitive material as thephotosensitive material is shown, which allows the portion which ischemically reacted with laser light, to be left. An accurate patternshape, in particular, a wiring with a thin width can be obtained by thelaser irradiation.

Then, development is performed by using etchant (or developer) to removeexcess portions, and baked to form a metal wiring serving as a sourcewiring 504 or a drain wiring 505.

Alternatively, after a material solution of a conductive film is droppedand dried indoors or pre-baked, exposure by laser irradiation may beperformed.

When the energy per area of laser light used for the light-exposure ismade larger, it is possible that main baking becomes unnecessary. Themanufacturing process can be shortened by reducing the step of mainbaking.

As a developer, an organic solvent, an alkali water solution (such as ametal alkali water solution or an organic alkali water solution) or thelike can be used. In addition, water may be added into the organicsolvent in such an extent that the dissolving power is not lost.

A top view at this time is shown in FIG. 4B. As shown in FIG. 4B, n-typesemiconductor films 508, 509 and 516 which are not overlapped with thesource wiring 504 or the drain wiring 505, are exposed. When the n-typesemiconductor films 508, 509 and 516 are exposed in this manner, theadhesion between the exposed portion and an insulating film includingsilicon can be enhanced, in a case where an amorphous silicon filmcontaining phosphorus is used as the n-type semiconductor film and theinsulating film including silicon is stacked in a later step.

The TFT shown in FIG. 4B is a double gate TFT, in which thesemiconductor layer is overlapped with gate electrodes in two portionsand which has two channels. Channel protective films 514 and 515 areprovided in the portions overlapping the channels. Between the twochannels, an n-type semiconductor film 516 and a wiring pattern 517 tobe formed over the n-type semiconductor film are provided. Here, inorder to avoid contamination in a development process, the n-typesemiconductor film and the channel protective films cover asemiconductor pattern 507 so that the semiconductor pattern 507 isprotected.

Therefore, the length L between one end and the other end of thesemiconductor film pattern 507 is a sum of the following lengths: thelength of a region overlapping the drain wiring; the length between theregion overlapping the drain wiring and one end of the semiconductorfilm: the length of a region overlapping the channel protective film514; the length between the channel and the wiring pattern 517; thelengths of the portions overlapping the wiring pattern (three portionsin sum); the lengths of the two regions between the three portions; thelength between the wiring pattern 517 and the other channel; the lengthof the channel overlapping the channel protective film 515; the lengthof a region overlapping the source wiring; and the length between theregion overlapping the source wiring and the other end of thesemiconductor film.

Then, an interlayer insulating film 513 made of an inorganic insultingfilm or an organic insulating film is formed. A material mainlycontaining silicon oxide, silicon nitride, silicon nitride oxide orsilicon oxynitride is formed by a PCVD method, is used as the interlayerinsulating film 513. In addition, as other materials for the interlayerinsulating film 513, an organic resin whose surface is planarized by acoating method (resin materials such as epoxy resin, acryl resin, phenolresin, novolac resign, melamine resin, and urethane resin) may be used.Further, as another example of materials for the interlayer insulatingfilm 513, a SiO_(x) film including an alkyl group formed withsiloxane-based polymer may be employed.

A contact hole 520 reaching the drain wiring 50S is formed in theinterlayer insulating film, and an electrode 512 overlapping the contacthole is formed. In this embodiment mode, the drain wiring 505 in thearea where the contact hole 520 is to be formed is made meandering(zigzag) to form concavities and convexities, thereby improving theadhesion. In addition, the wiring pattern 517 is also made meandering aswell as the drain wiring to form one stroke shape, and thus, laserscanning can be easily conducted for light-exposure. By making thewiring pattern to have one stroke shape, laser scanning can be conductedsmoothly.

As the electrode 512, indium tin oxide (ITO), indium tin oxide includingsilicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO₂) or the like maybe used to form a desired pattern. Further, a metal such as silver (Ag),gold (Au), copper (Cu), tungsten (W), or aluminum (Al) may be used. Theelectrode 512 has a structure in which it is contact with the gateinsulating film 511. Even if the adhesion between the electrode 512 andthe drain wiring 505 is not so high, it is acceptable as long as theadhesion between the electrode 512 and the gate insulating film 511 ishigh.

A top view of a part of one pixel in the case of using the electrode 512as a pixel electrode is shown in FIG. 5A. FIG. 5B is a cross-sectionalview taken along the line C-D of FIG. 5A.

The electrode 512 may be used as a connection electrode or a conductivepattern serving as an antenna, without being limited to a pixelelectrode or an electrode of a light-emitting element (cathode oranode).

As described above, in this embodiment mode, the conductive patternformed by a droplet-discharging method is exposed to laser light anddeveloped to form a microscopic pattern. Specifically, since the sourcewiring can be miniaturized, the aperture ratio of a liquid crystaldisplay device can be increased.

When the obtained TFT or the like is transferred to a flexible plasticfilm, it is also possible that a peeling layer (also referred to as aseparation layer) is formed first over the substrate 500, and a layer tobe separated for TFT or the like is formed. Then, the separation layeris removed or broken, an element such as a TFT is separated from thesubstrate 500, and an adhesive layer is provided and the element isattached onto a plastic film.

This embodiment mode can be freely combined with Embodiment Mode 1.

The present invention having the above structure will be described indetail in the following Examples.

EXAMPLE 1

An active matrix type liquid crystal display device can be manufacturedusing a TFT shown in Embodiment Mode 1 or Embodiment Mode 2 as aswitching element.

A manufacturing method of an active matrix liquid crystal display deviceusing a TFT shown in Embodiment Mode 2 as a switching element is shownhereinafter FIG. 6 shows an example of an active matrix liquid crystaldisplay device. Note that similar portions in FIG. 6 to those inEmbodiment Mode 2 are represented by the same reference numerals asthose in Embodiment Mode 2.

An insulating film 513 is formed after forming the source wiring 504 andthe drain wiring 505. A contact hole is formed in the insulating film513 and an electrode 512 serving as a pixel electrode is formed. Atransparent conductive film is used for the electrode 512.

Then, an orientation film 530 is formed to cover the electrode 512. Adroplet-discharging method, a screen printing method or an offsetprinting method may be adopted to form the orientation film 530. Afterthat, a rubbing treatment is conducted to the surface of the orientationfilm 530.

Then, a counter substrate 533 is provided with a counter electrode 534made of a transparent electrode and an orientation film 532 formedthereover. A sealant (not shown in the figure) with a closed pattern isthen formed by a droplet-discharging method so as to surround a regionoverlapped with a pixel portion. Here, an example in which a sealantwith a closed pattern is drawn, is shown, since a liquid crystal isdropped in a later step. However, a dipping method by which a liquidcrystal is injected with capillary phenomenon may be used afterproviding a seal pattern having an opening and attaching the TFTsubstrate thereto.

Next, a liquid crystal is dropped under reduced pressure so as toprevent bubbles from entering, and the both substrates are attached toeach other. A liquid crystal is dropped once or plural times in theclosed-loop seal pattern. A twisted nematic (TN) mode is used as anorientation mode of a liquid crystal in many cases. In this TN mode, theorientation direction of liquid crystal molecules is twisted at 90° C.with respect to the polarization of light from its entrance to the exit.In a case of manufacturing a TN liquid crystal display device, thesubstrates are pasted together so that the rubbing directions areorthogonalized.

The spacing between the pair of substrates may be maintained by sprayinga spherical spacer, forming a columnar spacer made of resin, or mixing afiller into the sealant. The above-mentioned columnar spacer is formedof an organic resin material mainly containing at least one materialselected from acrylic, polyimide, polyimideamide, and epoxy; any onematerial of silicon oxide, silicon nitride, silicon nitride oxide andsilicon oxynitride; or an inorganic material of a stacked film of thesematerials.

Next, an unnecessary substrate is sectioned. In a case of obtaining aplurality of panels from one substrate, each panel is separated off. Ina case of obtaining one panel from one substrate, the sectioning stepcan be skipped by pasting a counter substrate which is cut in advance.

An FPC is pasted through an anisotropic conductive layer by a knownmethod. A liquid crystal module shown in FIG. 6 is completed through theabove steps. Further, an optical film such as a color filter is attachedas necessary. In a case of a transmissive liquid crystal display device,polarization plates are attached to both the active matrix substrate andthe counter substrate.

A conductive film pattern is formed by a droplet-discharging method, andselectively irradiated with laser light. Thus, a more miniaturizedsource wiring or drain wiring than the conductive pattern itself justafter discharging, can be formed. According to the present invention,reduction of the number of steps and saving of materials are possibleand cost reduction as a result thereof is also possible.

Example 1 can be freely combined with Embodiment Mode 1 or EmbodimentMode 2.

EXAMPLE 2

An active matrix type light-emitting display device can be manufacturedusing a TFT shown in Embodiment Mode 1 or Embodiment Mode 2.

A manufacturing method of an active matrix light-emitting display deviceusing a TFT shown in Embodiment Mode 2 as a switching element is shownhereinafter. Here, a case where the TFT is an n-channel TFT is describedas one example. FIG. 7 shows an example of an active matrixlight-emitting display device. Note that similar portions in FIG. 7 tothose in Embodiment Mode 2 are represented by the same referencenumerals as those in Embodiment Mode 2.

An insulating film 513 is formed after forming the source wiring 504 andthe drain wiring 505. A contact hole is formed in the insulating film513 and an electrode 615 serving as a connection electrode is formed. Ametal conductive film formed by a sputtering method is used for theelectrode 615.

Then, an insulating film 616 having planarity is formed. A contact holeis formed in the insulating film 616 having planarity and a firstelectrode 618 is formed.

The first electrode 618 preferably serves as a cathode. To reflect lightby the first electrode, a desired pattern made from a composition mainlycontaining metal particles such as silver (Ag), gold (Au), copper (Cu),tungsten (W), or aluminum (Al) is formed to form the first electrode618.

Then, a partition 631 covering a periphery portion of the firstelectrode 618 is formed. The partition (also referred to as a bank) 631is formed by using a material containing silicon, an organic material ora compound material. In addition, a porous film may be used. It ispreferable that a photosensitive or non-photosensitive material such asacryl or polyimide is used, since the radius of curvature of the sidesurface is serially varies without any break in a thin film in an upperlayer.

Subsequently, a layer functioning as an electroluminescent layer,namely, a layer containing an organic compound 630 is formed. The layercontaining an organic compound 630 has a stacked structure, and eachlayer is formed by using an evaporation method or a coating method. Forexample, an electron transporting layer (an electron injecting layer), alight-emitting layer, a hole-transporting layer, a hole-injecting layerare sequentially formed over a cathode.

Note that a plasma treatment in oxygen atmosphere or a heat treatment invacuum atmosphere is preferably carried out before forming the layercontaining is an organic compound 630. In a case of using an evaporationmethod, an organic compound is vaporized beforehand by resistanceheating, and it is scattered toward the substrate when a shutter isopened to deposit it. The vaporized organic compound is scatteredupwardly to be evaporated on the substrate through an opening providedin a metal mask. In addition, a mask for each luminous color (R, G andB) may be aligned to achieve full-color.

Instead of forming R, G and B, separately, a material emitting a singlecolor is used as the layer containing an organic compound 630, and acolor filter or a color conversion layer can be combined to achievefull-color display.

Subsequently, the second electrode 632 is formed. The second electrode632 functioning as an anode of a light-emitting element is formed usinga transparent conductive film which transmits light. For example,besides ITO or ITSO, a transparent conductive film in which zinc oxide(ZnO) of 2 to 20% is mixed in indium oxide is used. A light-emittingelement has a structure in which the layer containing an organiccompound 630 is interposed between the first electrode and the secondelectrode. In addition, materials of the first and second electrodes arerequired to be selected in consideration of the work function. Both thefirst and second electrodes may be an anode or a cathode depending on apixel structure.

In addition, a protective layer protecting the second electrode 632 maybe formed.

Subsequently, the sealing substrate 634 is pasted with a sealant (notshown in the figure) to seal the light-emitting element. A regionsurrounded with the sealant is filled with a transparent filler 633. Asthe filler 633, it is not especially limited as long as it has alight-transmitting property, and an ultraviolet curing or heat curingepoxy resin may be typically used.

The FPC is attached to a terminal electrode with an anisotropicconductive film last.

Through the above steps, an active matrix light-emitting device as shownin FIG. 7 is manufactured. Thus, a more miniaturized source wiring ordrain wiring than the conductive pattern itself just after discharging,can be formed by forming a pattern of a conductive film by adroplet-discharging method and selectively irradiating the pattern withlaser light. According to the present invention, reduction of the numberof steps and saving of materials are possible and cost reduction as aresult thereof is also possible.

Example 2 can be freely combined with Embodiment Mode 1 or EmbodimentMode 2.

EXAMPLE 3

A wireless chip (also referred to as a wireless processor, a wirelessmemory, or a wireless tag) can also be formed using a TFT shown inEmbodiment Mode 1 or Embodiment Mode 2.

A structure of a wireless chip which can be formed according to thepresent invention is described with reference to FIG. 8. A wireless chipis constituted by a thin film integrated circuit 803 and an antenna 804connected thereto. The thin film integrated circuit and the antenna aresandwiched between cover materials 801 and 802. The thin film integratedcircuit 803 may be attached to the cover materials with an adhesive. InFIG. 8, one surface of the thin film integrated circuit 803 is attachedto the cover material 801 with an adhesive 805.

The thin film integrated circuit 803 is formed using a TFT shown inEmbodiment Mode 1 or 2, then peeled off by a known peeling process andattached to a cover material. The semiconductor element used for thethin film integrated circuit 803 is not limited to this, and in additionto the TFT, a memory element, a diode, a photoelectric conversionelement, a resistor element, a coil, a capacitor element, an inductorand the like, can also be used.

As shown in FIG. 8, an interlayer insulating film 811 is formed over theTFT of the thin film integrated circuit 803, and the antenna 804 isconnected to the TFT through the interlayer insulating film 811.Further, a barrier film 812 made of silicon nitride or the like isformed over the interlayer insulating film 811 and the antenna 804.

A conductive pattern is formed by discharging droplets containing aphotosensitive material and a conductor such as gold, silver or copperby a droplet-discharging method, and selectively irradiated with laserlight to form a pattern for the antenna 804. In this way, the antenna804 is formed. A portion of the conductive film pattern which is notirradiated with laser light is removed. When the antenna is formed by adroplet-discharging method, reduction in the number of steps and savingof materials can be achieved, leading to cost reduction.

For each of the cover materials 801 and 802, a film (made ofpolypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, orthe like); paper of a fibrous material; a stacked film where a base film(polyester, polyamide, an inorganic vapor deposition film, papers, orthe like) and an adhesive synthetic resin film (an acrylic basedsynthetic resin, an epoxy based synthetic resin, or the like) arestacked; or the like; is preferably used. The film is attached to asubject by thermocompression. In the thermocompression, an adhesivelayer provided in the outmost surface of the film or a layer (not anadhesive layer) formed as the outermost layer is melted by a heattreatment and is attached by applying pressure.

In a case that the cover material uses a flammable pollution-freematerial such as paper, fiber and carbon graphite, the used wirelesschip can be burned or cut out. The wireless chip using such a materialis pollution free, since it does not generate a poisonous gas even ifbeing burned.

Although the wireless chip is attached to the cover material 801 withthe adhesive 805 in FIG. 8, the wireless chip may be attached to anobject instead of the cover material 801.

The application range of such wireless chips is so wide. FIG. 9 showsexamples about the applications of wireless chips. Wireless chips may bemounted on various objects, for example, such as bills, coins,securities, bearer bonds, certificates (licenses, resident cards and thelike, see FIG. 9A), containers for wrapping objects (wrapping papers,bottles and the like, see FIG. 9C), recording media (DVD software, videotapes and the like, see FIG. 9B), vehicles (bicycles and the like, seeFIG. 9D), belongings (bags, glasses and the like), foods, plants,animals, human body, clothes, livingware, and electronic devices, orshipping tags of objects (see FIGS. 9E and 9F). The electronic devicesinclude liquid crystal display devices, EL display devices, televisionsets (also simply called TV, televisions or television receivers),cellular phones, and the like.

A wireless chip 810 is attached to the surface of an object orincorporated in an object such that the wireless chip 810 is fixed tothe object. For example, a wireless chip may be incorporated in a paperof a book, or an organic resin of a package. When a wireless chip isincorporated in bills, coins, securities, bearer bonds, certificates, orthe like, forgery can be prevented. In addition, when a wireless chip isincorporated in containers for wrapping objects, recording media,belongings, foods, clothes, livingware, electronic devices, or the like,more efficient test systems, rental systems or the like can be provided.A wireless chip which can be formed according to the present inventionis obtained in such a manner that, after a thin film integrated circuitformed over a substrate is peeled off by a known peeling process, it isprovided for a cover material; therefore, the wireless chip can bereduced in size, thickness and weight, and can be mounted on an objectwithout spoiling a design of the object. In addition, since such awireless chip has flexibility, it can be used for an object having acurved surface, such as bottles and pipes.

When a wireless chip which can be formed according to the presentinvention is applied to product management and distribution system, asophisticated system can be achieved. For example, when informationstored in a wireless chip mounted on a shipping tag is read by areader/writer provided beside a conveyor belt, information such asdistribution process and delivery address is read out to easily inspectan article and distribute packages.

Example 3 can be freely combined with Embodiment Mode 1 or EmbodimentMode 2.

EXAMPLE 4

As semiconductor devices and electronic devices according to the presentinvention, cameras such as video cameras or digital cameras, goggle-typedisplays (head mounted displays), navigation systems, audio reproductiondevices (such as car audio compositions, or audio compositions),personal computers, game machines, mobile information terminals (mobilecomputers, cellular phones, mobile game machines, electronic books, andthe like), image reproduction devices equipped with a recording medium(specifically, devices which can reproduce content of a recording mediumsuch as Digital Versatile Disk (DVD) and have a display for displayingthe image), and the like are given. Specific examples of the electronicdevices are shown in FIGS. 10A to 10D and FIG. 11.

FIG. 10A shows a digital camera, which includes a main body 2102, adisplay portion 2102, an imaging portion, operation keys 2104, a shutter2106 and the like. FIG. 10A shows the digital camera seen from thedisplay portion 2102 side, and the imaging portion is not shown in FIG.10A. According to the present invention, a digital camera can bemanufactured in a process with reduced manufacturing cost.

FIG. 10B shows a lap top personal computer including a main body 2201, acasing 2202, a display portion 2203, a keyboard 2204, an externalconnection port 2205, a pointing mouse 2206, and the like. According tothe present invention, a lap top personal compute can be manufactured ina process with reduced manufacturing cost.

FIG. 10C shows a portable image reproducing device provided with arecording medium (specifically a DVD player), which includes a main body2401, a casing 2402, a display portion A 2403, a display portion B 2404,a recording medium (such as a DVD) reading portion 2405, operation keys2406, a speaker portion 2407 and the like. The display portion A 2403mainly displays image information and the display portion B 2404 mainlydisplays character information. The category of such an imagereproducing device provided with a recording medium includes a home gamemachine and the like. According to the present invention, an imagereproducing device can be manufactured in a process with reducedmanufacturing cost.

FIG. 10D shows a display device which includes a casing 1901, a support1902, a display portion 1903, a speaker portion 1904, a video inputterminal 1905 and the like. This display device is manufactured by usinga thin film transistor formed by a manufacturing method described inEmbodiment Modes described above for the display portion 1903 and adriver circuit. Liquid crystal display devices, light-emitting devicesand the like are given as examples of display devices, specifically, alltypes of display devices for displaying information are included, forexample, display devices for computers, display devices for receivingtelevision broadcasting, and display devices for advertisement.According to the present invention, a display device, in particular, alarge size display device having a large screen of 22 to 50 inches, canbe manufactured in a process with reduced manufacturing cost.

In the cellular phone 900 shown in FIG. 11, a main body (A) 901including operation switches 904, a microphone 905, and the like isconnected with a hinge 910 to a main body (B) 902 including a displaypanel (A) 908, a display panel (B) 909, a loudspeaker 906, and the like,and it is openable and closable by the hinge 910. The display panel (A)908 and the display panel (B) 909 are placed in a casing 903 of the mainbody (B) 902 together with a circuit board 907. Pixel portions of thedisplay panel (A) 908 and the display panel (B) 909 are placed such thatthey are visible through an opening formed in the casing 903.

As to the display panel (A) 908 and the display panel (B) 909, thespecification such as the number of pixels can be appropriatelydetermined in accordance with functions of the cellular phone 900. Forexample, the display panel (A) 908 and the display panel (B) 909 can becombined as a main screen and a sub-screen, respectively.

The display panel (A) 908 includes a TFT shown in Examples 1 to 3 as atransistor of a pixel. According to the present invention, a mobileinformation terminal can be manufactured in a process with reducedmanufacturing cost.

The cellular phone according to Example 4 can be changed in variousmodes depending on functions or applications thereof. For example, itmay be a camera-equipped cellular phone by implementing an imagingelement in the hinge 910. Even when the operation switches 904, thedisplay panel (A) 908, and the display panel (B) 909 are placed in onecasing, so that all devices are set inside the casing, theabove-described effect can be obtained. Further, a similar effect can beobtained even when the structure of Example 4 is applied to aninformation display terminal provided with a plurality of displayportions.

As described above, various types of electronic devices can be completedby using a manufacturing method or a structure for implementing thepresent invention, in other words, any one manufacturing method orstructure of Embodiment Modes 1 and 2 and Examples 1 to 3.

According to the present invention, in a manufacturing process of adisplay device including a step of forming a conductive pattern, alight-exposure step or a development step can be reduced, and reductionof the amount of used materials can achieved. Therefore, a dramaticallycost reduction can be realized regardless of a substrate size.

The present application is based on Japanese Patent Application serialNo. 2005-027312 filed on Feb. 3, 2005 in Japanese Patent Office, theentire contents of which are hereby incorporated by reference.

1. An active matrix display device comprising: a first thin filmtransistor formed over a substrate; a pixel electrode formed over thesubstrate and electrically connected to the first thin film transistor;a driver circuit operationally connected to the first thin filmtransistor, the driver circuit comprising a second thin film transistor,wherein each of the first thin film transistor and the second thin filmtransistor comprises a semiconductor layer as an active layer, thesemiconductor layer including a metal oxide including at least indium.2. The active matrix display device according to claim 1, wherein themetal oxide includes zinc, gallium, and indium.
 3. The active matrixdisplay device according to claim 1, wherein the first thin filmtransistor is a top gate thin film transistor.
 4. The active matrixdisplay device according to claim 1, wherein the active matrix displaydevice is a liquid crystal display device.
 5. The active matrix displaydevice according to claim 1, wherein the active matrix display device isan EL display device.
 6. The active matrix display device according toclaim 1, wherein the substrate is a plastic substrate.
 7. The activematrix display device according to claim 1, wherein the substrate is aglass substrate.
 8. An active matrix display device comprising: a firstthin film transistor formed over a substrate; a pixel electrode formedover the substrate and electrically connected to the first thin filmtransistor; a driver circuit operationally connected to the first thinfilm transistor, the driver circuit comprising a second thin filmtransistor, wherein each of the first thin film transistor and thesecond thin film transistor is a bottom gate type thin film transistorand comprises a semiconductor layer as an active layer including a metaloxide including at least indium.
 9. The active matrix display deviceaccording to claim 8, wherein the metal oxide includes zinc, gallium,and indium.
 10. The active matrix display device according to claim 8,wherein the first thin film transistor is a top gate thin filmtransistor.
 11. The active matrix display device according to claim 8,wherein the active matrix display device is a liquid crystal displaydevice.
 12. The active matrix display device according to claim 8,wherein the active matrix display device is an EL display device. 13.The active matrix display device according to claim 8, wherein thesubstrate is a plastic substrate.
 14. The active matrix display deviceaccording to claim 8, wherein the substrate is a glass substrate.
 15. Anactive matrix display device comprising: a first thin film transistorformed over a substrate; an interlayer insulating film formed over thefirst thin film transistor; a pixel electrode formed over the interlayerinsulating film and electrically connected to the first thin filmtransistor; a driver circuit operationally connected to the first thinfilm transistor, the driver circuit comprising a second thin filmtransistor, wherein each of the first thin film transistor and thesecond thin film transistor comprises a semiconductor layer as an activelayer, the semiconductor layer including a metal oxide including atleast indium.
 16. The active matrix display device according to claim15, wherein the metal oxide includes zinc, gallium, and indium.
 17. Theactive matrix display device according to claim 15, wherein the firstthin film transistor is a top gate thin film transistor.
 18. The activematrix display device according to claim 15, wherein the active matrixdisplay device is a liquid crystal display device.
 19. The active matrixdisplay device according to claim 15, wherein the active matrix displaydevice is an EL display device.
 20. The active matrix display deviceaccording to claim 15, wherein the substrate is a plastic substrate. 21.The active matrix display device according to claim 15, wherein thesubstrate is a glass substrate.
 22. The active matrix display deviceaccording to claim 15, further comprising a drain wiring through whichthe pixel electrode is electrically connected to the first thin filmtransistor has a meandering portion.
 23. An active matrix display devicecomprising: a first thin film transistor formed over a substrate; aninterlayer insulating film formed over the first thin film transistor; apixel electrode formed over the interlayer insulating film andelectrically connected to the first thin film transistor; a drivercircuit operationally connected to the first thin film transistor, thedriver circuit comprising a second thin film transistor, wherein each ofthe first thin film transistor and the second thin film transistor is abottom gate type thin film transistor and comprises a semiconductorlayer as an active layer including a metal oxide including at leastindium.
 24. The active matrix display device according to claim 23,wherein the metal oxide includes zinc, gallium, and indium.
 25. Theactive matrix display device according to claim 23, wherein the firstthin film transistor is a top gate thin film transistor.
 26. The activematrix display device according to claim 23, wherein the active matrixdisplay device is a liquid crystal display device.
 27. The active matrixdisplay device according to claim 23, wherein the active matrix displaydevice is an EL display device.
 28. The active matrix display deviceaccording to claim 23, wherein the substrate is a plastic substrate. 29.The active matrix display device according to claim 23, wherein thesubstrate is a glass substrate.
 30. The active matrix display deviceaccording to claim 23, further comprising a drain wiring through whichthe pixel electrode is electrically connected to the first thin filmtransistor has a meandering portion.
 31. An electronic device having anactive matrix display device, the active matrix display devicecomprising: a first thin film transistor formed over a substrate; apixel electrode formed over the substrate and electrically connected tothe first thin film transistor; a driver circuit operationally connectedto the first thin film transistor, the driver circuit comprising asecond thin film transistor, wherein each of the first thin filmtransistor and the second thin film transistor comprises a semiconductorlayer as an active layer, the semiconductor layer including a metaloxide including at least indium.
 32. The electronic device according toclaim 31, wherein the metal oxide includes zinc, gallium, and indium.33. The electronic device according to claim 31, wherein the first thinfilm transistor is a top gate thin film transistor.
 34. The electronicdevice according to claim 31, wherein the active matrix display deviceis a liquid crystal display device.
 35. The electronic device accordingto claim 31, wherein the active matrix display device is an EL displaydevice.
 36. The electronic device according to claim 31, wherein thesubstrate is a plastic substrate.
 37. The electronic device according toclaim 31, wherein the substrate is a glass substrate.
 38. The electronicdevice according to claim 31, wherein the electronic device is acomputer.
 39. The electronic device according to claim 31, wherein theelectronic device is a television.
 40. The electronic device accordingto claim 31, wherein the electronic device is for advertisement.
 41. Anelectronic device having an active matrix display device, the activematrix display device comprising: a first thin film transistor formedover a substrate; a pixel electrode formed over the substrate andelectrically connected to the first thin film transistor; a drivercircuit operationally connected to the first thin film transistor, thedriver circuit comprising a second thin film transistor, wherein each ofthe first thin film transistor and the second thin film transistor is abottom gate type thin film transistor and comprises a semiconductorlayer as an active layer including a metal oxide including at leastindium.
 42. The electronic device according to claim 41, wherein themetal oxide includes zinc, gallium, and indium.
 43. The electronicdevice according to claim 41, wherein the first thin film transistor isa top gate thin film transistor.
 44. The electronic device according toclaim 41, wherein the active matrix display device is a liquid crystaldisplay device.
 45. The electronic device according to claim 41, whereinthe active matrix display device is an EL display device.
 46. Theelectronic device according to claim 41, wherein the substrate is aplastic substrate.
 47. The electronic device according to claim 41,wherein the substrate is a glass substrate.
 48. The electronic deviceaccording to claim 41, wherein the electronic device is a computer. 49.The electronic device according to claim 41, wherein the electronicdevice is a television.
 50. The electronic device according to claim 41,wherein the electronic device is for advertisement.